| PART |
Description |
Maker |
| CM400DU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM50TF-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM75BU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM75TF-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM600HU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150DU-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM200DY-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM75DY-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| CM200E3U-12H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
IGBT Modules: 600V
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
